Synthesis of Phenolic-Based Resist Materials for Photolithography
Sutikno, Sutikno Synthesis of Phenolic-Based Resist Materials for Photolithography. ORIENTAL JOURNAL OF CHEMISTRY.
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Abstract
Phenol-based photoresist for photolithography application is successfully developed in this research namely by mixing phenolic resin with ethanol solvent and sodium acetate 3-hydrate 30% of phenolic resin mass. Novolac phenolic resin is made by mixing formaldehyde and phenol in mol ratio 2,8:1 catalyzed using NaOH. Phenolic resin is made at heating temperature of 85° C and stirring rotation speed of 1000 rpm. Photoresist thin film is spincoated on the glass substrate and prebaked on the hotplate at 95° C for 60 s. The research result shows that microstructures of resist films which are manufactured of resol phenolic resin seem more homogeneous than that of novolac phenolic resin. The maximum absorbance is in the wavelength range of 380-500 nm, its density and viscosity are 1,41 g/ml and 198 centipoise, respectively.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Novolac, Phenolic, Photoresist, Photolitography, Spincoating. |
| Subjects: | Q Science > QC Physics |
| Fakultas: | Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika, S1 |
| Depositing User: | dina nurcahyani perpus |
| Date Deposited: | 28 Mar 2023 04:13 |
| Last Modified: | 28 Mar 2023 04:13 |
| URI: | http://lib.unnes.ac.id/id/eprint/56737 |
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