Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Sulhadi, - (2016) Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties. American Journal of Applied Sciences, 13. 1394 - 1399.

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Abstract

ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.

Item Type:	Article
Uncontrolled Keywords:	ZnO:Ga Thin Films, DC Magnetron Sputtering, Structural, Optical Properties
Subjects:	Q Science > QC Physics
Fakultas:	Fakultas Matematika dan Ilmu Pengetahuan Alam > FISIKA
Depositing User:	Setyarini UPT Perpus
Date Deposited:	23 Nov 2022 07:27
Last Modified:	13 Apr 2023 03:25
URI:	http://lib.unnes.ac.id/id/eprint/53394

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