Kyoo Hoo Kim, - and Rachmat Adhi Wibowo, - and Nokeun Park, - and Fianti, UNNES and Ersan Y Muslih , - (2015) Investigation of Deposition Parameters Dependence on Sputtered Cu2ZnSnSe4 Thin Films Properties. Advanced Materials Research, . 1125. pp. 143-147. ISSN 1662-8985

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Abstract

Cu2ZnSnSe4(CZTSe) thin films were deposited by sputtering process using powder compacted target of CuSe, ZnSe and SnSe on Corning 1737 glass for Indium-free thin film solar cell application. Film composition,structure and properties were investigated by varying deposition parameters,such as substrate temperature,film thickness and RF power in order to deposit films with a stoichiometric composition and single phase of CZTSe. At an optimal condition of experiment,substrate temperature toward 1500 C,RF power 75W, CZTSe films near stoichiometric composition with a polycrystalline stannite single phase were successfully deposited. Film thickness was little dependency with structure and composition except optical transmittance of the films. And it was observed to have a absorption coefficient of up to 104 cm-1, band gap energy of 1.5 eV, carrier concentration in order of 1019 cm-3, mobility of 100 cm2V-1s-1 and resistivity of 10-1-103 Ωcm.It was also showed that all films were identified as p-type semiconductor.

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