Photoluminescence study of ZnO:Al thin films with different power plasma

Budi Astuti, - Photoluminescence study of ZnO:Al thin films with different power plasma. Journal of Physics: Conference Series.

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Abstract

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at Argon pressure, deposition temperature and deposition time are 500 mTorr, 400C and 2 hours, respectivelly. Furthermore, for deposition process has been done on the variation of power plasma are 33, 43, and 50 watt. For the optical properties of the ZnO:Al thin films using Photoluminescence spectroscopy. Different plasma power will affecting on ion energy and momentum pounder. It’s effect on the quality of thin films that influence to photoluminescence intensity was obtained.

Item Type:	Article
Subjects:	Q Science > Q Science (General) Q Science > QC Physics
Fakultas:	Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika, S1
Depositing User:	dina nurcahyani perpus
Date Deposited:	08 Feb 2023 03:16
Last Modified:	11 May 2023 06:30
URI:	http://lib.unnes.ac.id/id/eprint/56148

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