Highly Oriented ZnO:Al Thin Films as an Alternative Transparent Conducting Oxide (TCO) for Windows Layer of Solar Cells


Sulhadi, - (2015) Highly Oriented ZnO:Al Thin Films as an Alternative Transparent Conducting Oxide (TCO) for Windows Layer of Solar Cells. Advanced Materials Research, 1123. pp. 364-367.

[thumbnail of Artikel] PDF (Artikel)
Download (307kB)
[thumbnail of Turnitin] PDF (Turnitin)
Download (1MB)

Abstract

Aluminum doped zinc oxide (ZnO:Al) thin films were deposited on corning glass substrates using DC magnetron sputtering at various growth temperatures (27°C to 400°C). X-ray diffraction spectroscopy (XRD) analyses showed the crystal structure of ZnO:Al thin films was wurtzite with c-axis orientation. By increasing the growth temperature, the crystal size and the crystal stress increased, while the resistivity of films decreased. Crystal size increased from 35 nm to 52 nm, the stress increased from -7.689 GPa to -5.126 GPa, while the resistivity decreased from 6.29x104 Ωcm to 4.05x103 Ωcm. Generally, the quality of crystal was enhanced as the increase of growth temperature.

Item Type: Article
Uncontrolled Keywords: ZnO:Al, Thin films, Lattice stress, Resistivity
Subjects: Q Science > QC Physics
Fakultas: Fakultas Matematika dan Ilmu Pengetahuan Alam > FISIKA
Depositing User: Setyarini UPT Perpus
Date Deposited: 23 Nov 2022 06:40
Last Modified: 12 Apr 2023 07:17
URI: http://lib.unnes.ac.id/id/eprint/53387

Actions (login required)

View Item View Item