Fianti, UNNES and Kyoo Ho Kim , - (2014) INFLUENCE OF THE [Cu]/[In] RATIO ON THE PROPERTIES OF CuInSe2 THIN FILMS. Chalcogenide Letters , 11 (11). 605 - 610 . ISSN 1584-8663

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Abstract

This study examined the influences of the [Cu]/[In] ratio on the properties of CuInSe2(CIS) thin films prepared by precursor deposition using pulsed laser deposition(PLD) and selenization, in which the [Cu]/[In] ratio of the films was varied from 0.36 to 2.31. Chalcopyrite CIS films formed at all ranges of [Cu]/[In] ratios of the experiment. The films with [Cu]/[In] ≥ 0.99, [Cu]/[In] = 0.55 and [Cu]/[In] ≤ 0.42 formed CIS with CuxSey, a CIS single phase and CIS with InSe, respectively. Structural compression of CIS caused by Cu vacancies in a Cu poor composition was observed and relieved near stoichiometry. All films exhibited p-type semi-conductivity and showed high absorption coefficients of ~104-5 cm-1. The band gap increased (0.98-1.34eV) and the carrier concentration decreased (3.46 x 1020-1.58 x 1018 cm-3) with decreasing [Cu]/[In] ratio. The film morphology varied with the [Cu]/[In] ratio, in which large grains were grown at Cu-rich ratios of [Cu]/[In] ≥ 0.99, small and compact grains were grown at a Cu- poor ratio of [Cu]/[In] = 0.55 and CIS grains with InSe nano-rod microstructures were grown with Cu very poor and In very rich ratios of [Cu]/[In] ≤ 0.42.

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