Growth of Single-phase CuInAlSe2 Thin Films by Using Pulsed Laser Deposition and Selenization
Kyoo Ho Kim , - and Fianti, UNNES (2012) Growth of Single-phase CuInAlSe2 Thin Films by Using Pulsed Laser Deposition and Selenization. Journal of the Korean Physical Society, 60 (12). 2001-2006. ISSN 1976-8524
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Abstract
CuInAlSe2 (CIAS) thin films were deposited layer by layer, with a certain stacking order on a substrate by using pulsed laser deposition (PLD) and selenization. The precursor was selenied by holding the temperatures for 10 minutes each at 160 ◦C, 260 ◦C, 300 ◦C, and 500 ◦C. The crystalline phase, the composition, the morphology, and the optical and electrical properties of the CIAS thin films were characterized. The thin films were single-phase chalcopyrite quaternaries with band gaps above 1.9 eV.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CuInAlSe2, Pulsed laser deposition, Selenization, Stacking order |
| Subjects: | Q Science > QC Physics |
| Fakultas: | Fakultas Matematika dan Ilmu Pengetahuan Alam > FISIKA |
| Depositing User: | mahargjo hapsoro adi |
| Date Deposited: | 30 Jul 2019 19:59 |
| Last Modified: | 05 Sep 2019 14:55 |
| URI: | http://lib.unnes.ac.id/id/eprint/32770 |
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